K3366-Z-E1 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
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K3366-Z-E1 Datasheet PDF : 7 Pages
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2SK3366
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
VGS = 4.0 V
40
4.5 V
30
10 V
20
10
0
− 50
0
ID = 10 A
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
4.5 V
10
0V
1
0.1
Pulsed
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source to Drain Voltage - V
10000
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
10
1
0.1
1
10
ID - Drain Current - A
VDD = 15 V
VGS = 10 V
RG = 10 Ω
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 20 A
14
30
12
10
VDD = 24 V
20
15 V
6V
VGS
8
6
10
4
VDS
2
0
0
5
10
15
20
QG - Gate Charge - nC
Data Sheet D14256EJ3V0DS
5
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