K3366-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name

Description

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K3366-Z

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3366

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 10 A

RDS(on)2 VGS = 4.5 V, ID = 10 A

RDS(on)3 VGS = 4.0 V, ID = 10 A

Gate to Source Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 10 A

Drain Leakage Current

IDSS

VDS = 30 V, VGS = 0 V

Gate to Source Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-on Delay Time

td(on)

ID = 10 A, VGS = 10 V, VDD = 15 V,

Rise Time

tr

RG = 10 Ω

Turn-off Delay Time

td(off)

Fall Time

tf

Total Gate Charge

QG

ID = 20 A, VDD = 24 V, VGS = 10 V

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Body Diode forward Voltage

VF(S-D) IF = 20 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 20 A, VGS = 0 V

Reverse Recovery Charge

Qrr

di/dt = 100 A/µs

MIN. TYP. MAX. UNIT

17.2 21 mΩ

26 33 mΩ

33 43 mΩ

1.5 2.0 2.5 V

5

10

S

10 µA

±10 µA

730

pF

250

pF

120

pF

28

ns

420

ns

47

ns

64

ns

15

nC

2.8

nC

4.1

nC

1.0

V

30

ns

26

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

0 10%

VGS

90%

ID

90%

ID

Wave Form

0 10%

td(on)

ID

tr td(off)

90%

10%

tf

ton

toff

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D14256EJ3V0DS

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