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K3366-Z-E1 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3366-Z-E1
NEC
NEC => Renesas Technology NEC
K3366-Z-E1 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
RDS(on)1 = 21 m(MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 33 m(MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 43 m(MAX.) (VGS = 4.0 V, ID = 10 A)
Low Ciss : Ciss = 730 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3366
TO-251 (MP-3)
2SK3366-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
±20
A
ID(pulse)
±80
A
Total Power Dissipation (TC = 25 °C)
PT
30
W
Total Power Dissipation (TA = 25 °C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Note PW 10 µs, Duty cycle 1 %
THERMAL RESISTANCE
Channel to case Thermal Resistance
Channel to ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
4.17
125
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14256EJ3V0DS00 (3rd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999
 

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