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MAC210A10FP View Datasheet(PDF) - ON Semiconductor

Part Name
Description
View to exact match
MAC210A10FP
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MAC210A10FP Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MAC210A8FP, MAC210A10FP
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
RθJC
2.2
Thermal Resistance, Case to Sink
RθCS
2.2 (typ)
Thermal Resistance, Junction to Ambient
RθJA
60
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
" p Peak On-State Voltage
(ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%)
VTM
1.2
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
12
12
20
35
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
VGT
0.9
0.9
1.1
1.4
Gate Non–Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 , TJ = +125°C)
All Four Quadrants
VGD
0.2
Holding Current
" (Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 200 mA)
IH
6.0
Turn-On Time
(Rated VDRM, ITM = 14 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
tgt
1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = +70°C)
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +70°C)
dv/dt(c)
dv/dt
5.0
100
Unit
°C/W
°C/W
°C/W
°C
Max Unit
10
µA
2.0
mA
1.65 Volts
mA
50
50
50
75
Volts
2.0
2.0
2.0
2.5
Volts
50
mA
µs
V/µs
V/µs
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