IRFIB7N50LPBF View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
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IRFIB7N50LPBF Datasheet PDF : 9 Pages
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IRFIB7N50L, SiHFIB7N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
2.69
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.1 Ab
VDS = 50 V, ID = 4.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 Vc
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VGS = 10 V
ID = 6.8 A, VDS = 400 V,
see fig. 7 and 16b
Qgd
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
RG
td(on)
tr
td(off)
tf
IS
Pulsed Diode Forward Currenta
ISM
f = 1 MHz, open drain
VGS = 10 V
VDD = 250 V, ID = 6.8 A,
RG = 9.0 Ω,
see fig. 11a and 11bb
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 6.8 A,
TJ = 125 °C, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IS = 6.8 A,
TJ = 125 °C, dI/dt = 100 A/µsb
MIN.
500
-
3.0
-
-
-
-
4.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.44
-
V/°C
-
5.0
V
-
± 100 nA
-
50
µA
-
2.0 mA
0.32 0.38
Ω
-
-
S
2220
-
230
-
23
-
2780
-
pF
63
-
140
-
100
-
-
92
-
24
nC
-
44
0.88
-
Ω
23
-
36
-
ns
47
-
19
-
-
6.8
A
-
27
-
1.5
V
85
130
ns
130 200
280 420
nC
570 860
www.vishay.com
2
Document Number: 91177
S-Pending-Rev. A, 24-Jun-08
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