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K18A50D Просмотр технического описания (PDF) - Toshiba

Номер в каталогеКомпоненты Описаниепроизводитель
K18A50D Silicon N Channel MOS Type / FET Toshiba
Toshiba Toshiba
K18A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK18A50D
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01 0.01
0.001
10μ
100μ
rth – tw
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.5 °C/W
1m
10m
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
100 μs *
10 ID max (continuous)
1 ms *
1
DC operation
Tc = 25°C
0.1
*: SINGLE NONREPETITIVE
0.01 PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
0.1
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
600
500
400
300
200
100
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch(°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 2.8 mH
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
5
2010-08-12
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