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K18A50D Просмотр технического описания (PDF) - Toshiba

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K18A50D Silicon N Channel MOS Type / FET Toshiba
Toshiba Toshiba
K18A50D Datasheet PDF : 6 Pages
1 2 3 4 5 6
TK18A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK18A50D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.22 (typ.)
High forward transfer admittance: Yfs= 8.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
V
±30
V
18
A
72
50
W
533
mJ
18
A
5.0
mJ
150
°C
55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. 1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.8 mH, RG = 25 Ω, IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2010-08-12
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