FQD60N03L View Datasheet(PDF) - Fairchild Semiconductor
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Description
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FQD60N03L Datasheet PDF : 11 Pages
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Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
30
VDS = 25V
VGS = 0V
-
TC = 125oC
-
VGS = ±20V
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1
rDS(ON)
Drain to Source On Resistance
ID = 30A, VGS = 10V
ID = 19A, VGS = 4.5V
-
-
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(5)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
-
VDS = 15V, V GS = 0V,
-
f = 1MHz
-
VGS = 0V to 10V
-
VGS = 0V to 5V VDD = 15V
-
VGS = 0V to 1V ID = 19A
-
Ig = 1.0mA
-
-
Switching Characteristics (V GS = 4.5V)
tO N
Turn-On Time
-
td(ON)
Turn-On Delay Time
-
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 15V, ID = 7.9A
-
VGS = 4. 5V, RGS = 18 Ω
-
tf
Fall Time
-
tOFF
Turn-Off Time
-
Switching Characteristics (V GS = 10V)
tO N
Turn-On Time
-
td(ON)
Turn-On Delay Time
-
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 15V, ID = 7.9A
-
VGS = 10 V, RGS = 18 Ω
-
tf
Fall Time
-
tOFF
Turn-Off Time
-
Unclamped Inductive Switching
tAV
Avalanche Time
ID = 2.7 A, 3.0 mH
180
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
ISD = 19A
-
ISD = 10A
-
ISD = 19A, dISD /dt = 100A/µs
-
ISD = 19A, dISD /dt = 100A/µs
-
Typ Max Units
-
-
V
-
1
µA
-
250
-
±100
nA
-
3
V
0.014 0.023
Ω
0.024 0.030
900
-
pF
210
-
pF
90
-
pF
18
28
nC
9.6
14
nC
1.0
1.5
nC
3.4
-
nC
3.4
-
nC
-
90
ns
11
-
ns
49
-
ns
27
-
ns
28
-
ns
-
83
ns
-
48
ns
6
-
ns
26
-
ns
52
-
ns
28
-
ns
-
120
ns
-
-
µs
-
1.25
V
-
1.0
V
-
58
ns
-
70
nC
©2004 Fairchild Semiconductor Corporation
FQD60N03L Rev. B1
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