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FQP12N60C View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP12N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP12N60C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
Notes :
1. VGS = 0 V
2. ID=250µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FQP12N60C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 6.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9-2. Maximum Safe Operating Area
for FQPF12N60C
Operation in This Area
102
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
DC
100
10-1
10-2
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
4
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
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