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FQP12N60C データシートの表示(PDF) - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
FQP12N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP12N60C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101 Bottom : 4.5 V
Notes :
100
1. 250µs Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
VGS = 10V
1.0
0.5
0
VGS = 20V
Note : TJ = 25
5
10
15
20
25
30
35
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150
25
Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 120V
10
VDS = 300V
8
VDS = 480V
6
4
2
Note : ID = 12A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
3
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
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