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FQP12N60C View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP12N60C 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
FQP12N60C Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Package Marking and Ordering Information
Device Marking
FQP12N60C
FQPF12N60C
Device
FQP12N60C
FQPF12N60C
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
--
VDS = 480V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 6A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 6A
(Note 4) --
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
--
Coss
Output Capacitance
f = 1.0MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, ID = 12A
RG = 25
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 400V, ID = 12A
VGS = 10V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 12A
dIF/dt =100A/µs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 12A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
0.5
--
--
--
--
--
0.53
13
1760
182
21
30
85
140
90
48
8.5
21
--
--
--
420
4.9
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
0.65
--
S
2290 pF
235 pF
28
pF
70
ns
180 ns
280 ns
190 ns
63
nC
--
nC
--
nC
12
A
48
A
1.4
V
--
ns
--
µC
2
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
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