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BU2507 View Datasheet(PDF) - Philips Electronics

Part Name
Description
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BU2507
Philips
Philips Electronics Philips
BU2507 Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
VBEsat / V
1.2
1.1
1
BU2507AF/AX
Ths = 25 C
Ths = 85 C
IC = 4 A
0.9
IC = 3 A
0.8
0.7
0.6
0
0.5
1
1.5 IB / A 2
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Ptot / W
10
BU2507AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
1
0.1
0
0.5
1 IB / A 1.5
2
Fig.8. Typical losses.
PTOT = f (IB); IC = 4 A; f = 16 kHz
ts/tf/ us
10
BU2507AF/AX/Df/DX85ts/tf
8
6
4
2
0
0
0.5
1
1.5 IB / A 2
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz
Product specification
BU2507AF
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
Zth / K/W
10
BU2507AF/X/DF/X
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01 D = 0
PD
tp
D = tp
T
T
t
0.001
1E-06
1E-4
10E-2
1E+00
t/s
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
September 1997
4
Rev 1.100
 

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