datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

2SC1008-R View Datasheet(PDF) - Transys Electronics Limited

Part NameDescriptionManufacturer
2SC1008-R TO-92 Plastic-Encapsulated NPN Transistors Transys-Electronics
Transys Electronics Limited Transys-Electronics
2SC1008-R Datasheet PDF : 1 Pages
1
Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1008 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
0.8 W (Tamb=25)
Collector current
ICM:
0.7
A
Collector-base voltage
V(BR)CBO:
80
V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA , IE=0
80
Collector-emitter breakdown voltage V(BR)CEO
IC= 10mA , IB=0
60
Emitter-base breakdown voltage
V(BR)EBO
IE= 10µA, IC=0
8
Collector cut-off current
ICBO
VCB=60 V , IE=0
Emitter cut-off current
IEBO
VEB= 5 V , IC=0
DC current gain
hFE
VCE= 2 V, IC=50mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB=50 mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB=50mA
Transition frequency
fT
VCE=10V, IC= 50mA
30
TYP
MAX
0.1
0.1
400
0.4
1.1
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400
Direct download click here
 

Share Link : Transys-Electronics
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]