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2SC1008-G View Datasheet(PDF) - Micro Commercial Components

Part NameDescriptionManufacturer
2SC1008-G NPN Silicon Epitaxial Transistor MCC
Micro Commercial Components MCC
2SC1008-G Datasheet PDF : 2 Pages
1 2
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
General Purpose Switching and Amplification
Capable of 0.8Watts of Power Dissipation.
Collector-current 0.7A
Collector-base Voltage 80V
Marking : C1008
2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
NPN Silicon
Epitaxial Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
60
Vdc
(IC=10mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage
80
Vdc
(IC=100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
8
Vdc
(IE=10uAdc, IC=0)
ICBO
Collector Cutoff Current
0.1
uAdc
(VCB=60Vdc, IE=0Adc)
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0Adc)
0.1 uAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Cob
DC Current Gain*
(IC=50mAdc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Collector Output Capacitance
(VCB=10Vdc,IC=0,f=1MHz)
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=50mAdc, VCE=10Vdc)
CLASSIFICATION OF HFE (1)
Rank
Range
R
40-80
O
70-140
40
400
0.4 Vdc
1.1
Vdc
Typ 8
pF
30
Y
120-240
MHz
G
200-400
B
C
D
G
EB
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
Revision: A
www.mccsemi.com
1 of 2
2011/04/13
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