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2PC4617S View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
2PC4617S
Philips
Philips Electronics Philips
2PC4617S Datasheet PDF : 0 Pages
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC4617
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
833
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PC4617
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 6 V; note 1
120
2PC4617Q
120
2PC4617R
180
2PC4617S
270
collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1
collector capacitance
IE = ie = 0; VCB = 12 V; f = 1 MHz
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz; 100
note 1
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
MAX.
100
5
100
560
270
390
560
200
1.5
UNIT
nA
µA
nA
mV
pF
MHz
1999 May 21
3
 

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