K2511 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
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K2511 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
60
VGS = 4 V
40
VGS = 10 V
20
ID = 20 A
0
–50
0
50 100 150
Tch - Channel Temperature - °C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt =100 A/µs
VGS = 0
100
10
1.0
0.1
1.0
10
100
ID - Drain Current - A
2SK2511
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
VGS = 0V
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(on)
tf
tr
td(off)
VDD =30 V
VGS =10 V
RG =10 Ω
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
ID = 40 A
14
60
12
VGS
VDD = 12 V
10
30 V
40
48 V
8
VDS
6
20
4
2
0
0
20
40
60
80
Qg - Gate Charge - nC
5
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