K3363-01 View Datasheet(PDF) - Fuji Electric
Part Name
Description
View to exact match
K3363-01 Datasheet PDF : 4 Pages
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2SK3363-01
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=50A,VGS=10V
20
15
10
max.
typ.
5
0
-50
0
50
100
150
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
100n
10n
Ciss
Coss
1n
Crss
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
3.0
2.5
2.0
max.
1.5
typ.
1.0
min.
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=100A,Tch=25°C
25
25
VDS
VGS
20
20
Vcc=24V
15
15
15V
10
10
5
5
100p
10-2
10-1
100
101
102
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
220
200
180
160
140
120
100
10V
5V
80
VGS=0V
60
40
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD [V]
0
0
0
50
100
150
200
250
300
Qg [nC]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=15V,VGS=10V,RG=10Ω
104
103
102
101
10-1
td(off)
tf
tr
td(on)
100
101
102
ID [A]
t-ID
3
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