K3219-01MR View Datasheet(PDF) - Fuji Electric
Part Name
Description
View to exact match
K3219-01MR Datasheet PDF : 4 Pages
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2SK3218-01
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
120
100
80
60
max.
typ.
40
20
0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
100n
10n
Ciss
1n
Coss
Crss
100p
10-2
10-1
100
101
102
VDS [V]
Typical Forward Characteristics of Reverse Diode
-ID=f(VSD):80µs pulse test,Tch=25°C
100
90
80
70
60
50
40
30
20
10
10V
5V
VGS=0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.5
4.0
3.5
max.
3.0
typ.
2.5
min.
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25°C
150
30
125 VDS
100
75
50
Vcc=120V
75V
30V
25
VGS
20
15
10
25
5
0
0
0 20 40 60 80 100 120 140 160 180 200
Qg [nC]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
104
103
td(off)
102
tf
tr
td(on)
101
10-1
100
101
102
ID [A]
3
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