STP10NM60ND View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STP10NM60ND

N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh™ II Power MOSFET (with fast diode)

STMicroelectronics 

STD10NM60ND, STF10NM60ND, STP10NM60ND

3

Test circuits

Test circuits

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

VDD

VD

VGS

RG

PW

RL

2200

µF

D.U.T.

3.3

µF VDD

12V

47kΩ

1kΩ

100nF

Vi=20V=VGMAX

2200

µF

IG=CONST

2.7kΩ

100Ω

D.U.T.

VG

47kΩ

PW

AM01468v1

1kΩ

AM01469v1

Figure 20. Test circuit for inductive load

Figure 21. Unclamped inductive load test

switching and diode recovery times

circuit

G

25 Ω

A

D

D.U.T.

S

B

AA

FAST

DIODE

L=100µH

B

3.3

B

µF

D

G

RG

S

1000

µF

VDD

Vi

L

VD

2200

3.3

µF

µF

VDD

ID

D.U.T.

Pw

AM01470v1

AM01471v1

Figure 22. Unclamped inductive waveform

V(BR)DSS

VD

Figure 23. Switching time waveform

ton

tdon

tr

toff

tdoff tf

VDD

IDM

ID

0

VDD

90%

10% VDS

90%

VGS

90%

10%

AM01472v1

0

10%

AM01473v1

Doc ID 18467 Rev 2

9/19

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