STB75NF75L-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STB75NF75L-1
STMicroelectronics
STB75NF75L-1 Datasheet PDF : 11 Pages
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STB75NF75L/-1 STP75NF75L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 40 V
ID = 37.5 A
35
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
150
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 60V ID = 75 A VGS= 5V
75
90
nC
18
nC
31
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 40 V
ID = 37.5 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
Min.
Typ.
110
60
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 75 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 75 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
380
7.5
Max.
75
300
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/11
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