STB75NF75L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STB75NF75L

N-CHANNEL 75V - 0.009 Ω- 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STB75NF75L/-1 STP75NF75L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

0.5

Rthj-amb Thermal Resistance Junction-ambient

Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

Typ

300

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ.

V(BR)DSS Drain-source

Breakdown Voltage

ID = 250 µA VGS = 0

75

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 15 V

°C/W

°C/W

°C

Max.

Unit

V

1

µA

10

µA

±100

nA

ON (*)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

VGS = 5 V

ID = 37.5 A

ID = 37.5 A

Min.

1

Typ.

0.009

0.010

Max.

2.5

0.011

0.013

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (*)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

Min.

VDS = 15 V

ID = 37.5 A

VDS = 25V, f = 1 MHz, VGS = 0

Typ.

120

4300

660

205

Max.

Unit

S

pF

pF

pF

2/11

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