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1N5820 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
1N5820
ST-Microelectronics
STMicroelectronics ST-Microelectronics
1N5820 Datasheet PDF : 5 Pages
1 2 3 4 5
1N582x
THERMAL RESISTANCES
Symbol
Rth (j-a)
Rth (j-l)
Parameter
Junction to ambient
Lead length = 10 mm
Junction to lead
Lead length = 10 mm
Value
80
25
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 25°C
IF = 3 A
Tj = 25°C
IF = 9.4 A
1N5820 1N5821 1N5822 Unit
2
2
2
mA
20
20
20
mA
0.475 0.5 0.525
V
0.85
0.9
0.95
V
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equations :
P
P
=
=
0.33
0.33
x
x
IF(AV)
IF(AV)
+
+
0.035
0.060
IIFF22((RRMMSS
)
)
for
for
1N5820
1N5822
/
1N5821
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
PF(av)(W)
1.8
1.6
δ = 0.05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
1.5 2.0 2.5
δ=tp/T
tp
3.0 3.5 4.0
PF(av)(W)
2.0
1.8
1.6
δ = 0.05
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
1.5 2.0
δ=tp/T
2.5 3.0
tp
3.5
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
2/5
 

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