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STP3NC60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STP3NC60
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STP3NC60 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP3NC60 - STP3NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 1.5 A
RG = 4.7VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 480V, ID = 3 A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480V, ID = 3 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
9
13
13
2.3
4.4
Max.
18.2
Unit
ns
ns
nC
nC
nC
Min.
Typ.
13
15
21
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 3 A, di/dt = 100A/µs, VDD
= 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
420
1.5
7.1
Max.
3
12
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
 

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