STP6NK60ZFP View Datasheet(PDF) - STMicroelectronics
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STP6NK60ZFP Datasheet PDF : 17 Pages
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STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 3 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
14
ns
14
ns
47
ns
19
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 6 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs
VDD = 50 V, Tj = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
6
A
24 A
1.6 V
445
ns
2.7
µC
12
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown
voltage
Eggs± 1 mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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