2SC2810 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

View to exact match

2SC2810

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.6A

ICBO

Collector cut-off current

VCB=500V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=3A ; VCE=4V

fT

Transition frequency

IC=0.5A ; VCE=12V

Product Specification

2SC2810

MIN TYP. MAX UNIT

400

V

500

V

7

V

0.5

V

1.3

V

10

μA

10

μA

10

18

MHz

2

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