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ST-13007 View Datasheet(PDF) - Semtech Electronics LTD.

Part Name
Description
View to exact match
ST-13007
Semtech-Electronics
Semtech Electronics LTD. Semtech-Electronics
ST-13007 Datasheet PDF : 2 Pages
1 2
ST 13007
NPN Silicon Transistor
for high voltage, high-speed power switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation (Ta = 25 OC)
Total Power Dissipation (TC = 25 OC)
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 2 A
Collector Cutoff Current
at VCB = 700 V
Emitter Cutoff Current
at VEB = 9 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 1 mA
Collector Emitter Saturation Voltage
at IC = 5 A, IB = 1 A
Base Emitter Saturation Voltage
at IC = 5 A, IB = 1 A
Current Gain Bandwidth Product
at VCE = 10 V, IC = 0.5 A
Collector Base Capacitance
at VCB = 10 V, f = 0.1 MHz
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Ptot
TJ
TS
TO-220 Plastic Package
Value
Unit
700
V
400
V
9
V
8
A
2
W
80
W
150
OC
- 55 to + 150
OC
Symbol Min.
hFE
10
ICBO
-
IEBO
-
V(BR)CBO 700
V(BR)CEO 400
V(BR)EBO
9
VCE(sat)
-
VBE(sat)
-
fT
4
Ccb
-
Typ.
-
-
-
-
-
-
-
-
-
110
Max.
70
100
100
-
-
-
2
1.6
-
-
Unit
-
µA
µA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 26/04/2007
 

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