BA779-2-HG3-08 View Datasheet(PDF) - Vishay Semiconductors
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BA779-2-HG3-08 Datasheet PDF : 5 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BA779-2-G
Vishay Semiconductors
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
0.001 0.01
0.1
1
10
95 9734
IF - Forward Current (mA)
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
0
V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20
40
60
80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.2, 25-Feb-13
2
Document Number: 83322
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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