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1N5817 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
1N5817
ST-Microelectronics
STMicroelectronics ST-Microelectronics
1N5817 Datasheet PDF : 5 Pages
1 2 3 4 5
1N581x
Fig. 8-1: Reverse leakage current versus reverse
voltage applied (typical values) (1N5817/1N5818).
Fig. 8-2: Reverse leakage current versus reverse
voltage applied (typical values) (1N5819).
IR(mA)
1E+1
Tj=125°C
1E+0
1E-1
Tj=100°C
1N5817
1N5818
IR(mA)
1E+1
1E+0
Tj=125°C
1E-1
Tj=100°C
1E-2
1E-2
Tj=25°C
Tj=25°C
1E-3
0
VR(V)
VR(V)
1E-3
5
10
15
20
25
30
0 5 10 15 20
30 35 40
Fig. 9-1: Forward voltage drop versus forward
current (typical values) (1N5817/1N5818).
Fig. 9-2: Forward voltage drop versus forward
current (typical values) (1N5819).
IFM(A)
10.00
IFM(A)
10.00
1.00
0.10
Tj=125°C
Tj=100°C
Tj=25°C
1.00
0.10
Tj=125°C
Tj=100°C
Tj=25°C
VFM(V)
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VFM(V)
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig. 10: Non repetitive surge peak forward current
versus number of cycles.
IFSM(A)
30
25
20
15
10
5
0
1
F=50Hz Tj initial=25°C
Number of cycles
10
100
1000
4/5
 

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