1N5817 View Datasheet(PDF) - STMicroelectronics
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1N5817 Datasheet PDF : 5 Pages
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1N581x
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5817/1N5818).
IM(A)
10
9
8
7
6
5
4
3
2 IM
1
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819).
IM(A)
8
7
6
5
4
3
2
IM
1
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-1
Single pulse
1E+0
tp(s)
1E+1
T
δ=tp/T
1E+2
tp
1E+3
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
500
200
100
50
20
10
1
2
1N5817
1N5819
F=1MHz
Tj=25°C
1N5818
VR(V)
5
10
20
40
3/5
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