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1N5817 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
1N5817
ST-Microelectronics
STMicroelectronics ST-Microelectronics
1N5817 Datasheet PDF : 5 Pages
1 2 3 4 5
1N581x
THERMAL RESISTANCES
Symbol
Rth (j-a)
Rth (j-l)
Parameter
Junction to ambient
Lead length = 10 mm
Junction to lead
Lead length = 10 mm
Value
100
45
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR *
VF *
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 100°C
Tj = 25°C
IF = 1 A
Tj = 25°C
IF = 3 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equations :
P
P
=
=
0.3
0.3
x
x
IF(AV)
IF(AV)
+
+
0.090
0.150
IIFF22((RRMMSS
)
)
for
for
1N5817
1N5819
/
1N5818
1N5817 1N5818 1N5819
0.5
0.5
0.5
10
10
10
0.45 0.50 0.55
0.75 0.80 0.85
Unit
mA
mA
V
V
Fig. 1: Average forward power dissipation versus
average forward current (1N5817/1N5818).
Fig. 2: Average forward power dissipation versus
average forward current (1N5819).
PF(av)(W)
0.6
0.5
δ = 0.05
0.4
0.3
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
0.2
T
0.1
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
PF(av)(W)
0.7
0.6
δ = 0.05
0.5
0.4
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
0.3
0.2
T
0.1
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 2-1: Average forward current versus ambient
temperature (δ=0.5) (1N5817/1N5818).
Fig. 2-2: Average forward current versus ambient
temperature (δ=0.5) (1N5819).
IF(av)(A)
1.2
1.0
Rth(j-a)=Rth(j-l)=45°C/W
0.8
Rth(j-a)=100°C/W
0.6
0.4
T
0.2
δ=tp/T
tp
Tamb(°C)
0.0
0
25
50
75
100
125
150
IF(av)(A)
1.2
1.0
Rth(j-a)=Rth(j-l)=45°C/W
0.8
Rth(j-a)=100°C/W
0.6
0.4
T
0.2
δ=tp/T
tp
Tamb(°C)
0.0
0
25
50
75
100
125
150
2/5
 

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