FCA20N60S-F109 View Datasheet(PDF) - Fairchild Semiconductor
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FCA20N60S-F109 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
101
6.0 V
Bottom : 5.5 V
100
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
0.4
VGS = 10V
0.3
VGS = 20V
0.2
0.1
0.0
0
* Note: TJ = 25
5
10 15 20 25 30 35 40 45 50
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
7000
6000
5000
4000
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
C
oss
C
iss
C
rss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
102
101
150oC
25oC
-55oC
100
* Note:
1. VDS = 40V
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.2
150oC
25oC
∗ Notes :
1. VGS = 0V
2. 250 μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 480V
8
6
4
2
* Note : ID = 20A
0
0
10
20
30
40
50
60
Q , Total Gate Charge [nC]
G
3
FCA20N60S REV. A1
www.fairchildsemi.com
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