JS28F128J3D-75 View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
View to exact match
JS28F128J3D-75 Datasheet PDF : 66 Pages
| |||
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
7.2
Program, Erase, Block-Lock Specifications
Table 13: Configuration Performance
#
Symbol
Parameter
Typ Max(8) Unit
Notes
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
128
654
µs 1,2,3,4,5,6,7
Byte Program Time (Using Word/Byte Program Command)
40
175
µs
1,2,3,4
for 130nm
W16
tWHQV3
tEHQV3
Byte Program Time (Using Word/Byte Program Command)
125
150
µs
1,2,3,4
for 65nm
Block Program Time (Using Write to Buffer Command)
0.53
2.4
sec
1,2,3,4
W16
tWHQV4
tEHQV4
Block Erase Time
1.0
4.0
sec
1,2,3,4
W16
tWHQV5
tEHQV5
Set Lock-Bit Time
50
60
µs
1,2,3,4,9
W16
tWHQV6
tEHQV6
Clear Block Lock-Bits Time
0.5
0.70
sec
1,2,3,4,9
W16
tWHRH1
tEHRH1
Program Suspend Latency Time to Read
15
20
µs
1,2,3,9
W16
tWHRH
tEHRH
Erase Suspend Latency Time to Read
15
20
µs
1,2,3,9
WY
tSTS
STS Pulse Width Low Time
500
ns
1
Notes:
1.
Typical values measured at TA = +25 °C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to
change based on device characterization.
2.
These performance numbers are valid for all speed versions.
3.
Sampled but not 100% tested.
4.
Excludes system-level overhead.
5.
These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6.
Effective per-byte program time (tWHQV1, tEHQV1) is 4µs/byte (typical).
7.
Effective per-word program time (tWHQV2, tEHQV2) is 8µs/word (typical).
8.
Max values are measured at worst case temperature, data pattern and VCC corner after 100k cycles (except as noted).
9.
Max values are expressed at 25 °C/-40 °C.
7.3
Reset Specifications
Figure 14: AC Waveform for Reset Operation
STS (R)
RP# (P)
Vcc
P1
P2
P3
Note: STS is shown in its default mode (RY/BY#)
December 2007
316577-06
Datasheet
29
|
|
Share Link: 