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K2366 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K2366 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2353/2SK2354
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
ID = 4 A
3.0
ID = 2 A
2.0
1.0
0 –50
VGS = 10 V
0
50
100 150
Tch - Channel Temperature - ˚C
5 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1.0 MHz
1 000
Ciss
Coss
100
10
5
1
Crss
10
100
VDS - Drain to Source Voltage - V
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
Pulsed
10
10 V
VGS = 0
1.0
0.1
0.05
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
500
tr
100
tf
td(off)
10
td(on)
1.0
0.5
0.1
VDD = 100 V
VGS = 10 V
RG = 25
1.0
10
100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
500
di/dt = 50 A/ns
VGS = 0
400
300
200
100
0
0.1
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
16
ID = 4.5 A
14
VDD = 400 V
300
250 V
VGS
12
125 V
10
200
8
6
100
4
2
VDS
0
5
10
15
20
Qg - Gate Charge - nC
5
 

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