K2361 View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
View to exact match
K2361
NEC => Renesas Technology
K2361 Datasheet PDF : 8 Pages
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2SK2353/2SK2354
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Drain to Source On-Resistance
SYMBOL
RDS(on)
MIN.
Gate to Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VGS(off)
2.5
| yfs |
1.0
IDSS
IGSS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
TYP.
1.0
1.1
670
140
18
11
8
40
8
20
4.5
9
1.0
270
1.0
MAX.
1.4
1.5
3.5
100
±100
UNIT
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CONDITIONS
VGS = 10 V 2SK2353
ID = 2.5 A 2SK2354
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VDS = VDSS, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS(on) = 10 V
VDD = 150 V
RG = 10 Ω RL = 60 Ω
ID = 4.5 A
VDD = 400 V
VGS = 10 V
IF = 4.5 A, VGS = 0
IF = 4.5 A, VGS = 0
di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T.
RG = 25 Ω
L
PG
VGS = 20 - 0 V
50 Ω
VDD
D.U.T.
RG
PG. RG = 10 Ω
IAS
ID
VDD
BVDSS
VDS
Starting Tch
VGS
0
t
t = 1 µs
Duty Cycle ≤ 1 %
Test Circuit 3 Gate Charge
RL
VDD
VGS
Wave
Form
VGS
10 %
0
90 %
VGS (on)
ID
90 %
ID
Wave
Form
10 %
0
td (on)
ID
tr
td (off)
90 %
10 %
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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