datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K2361 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K2361 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2353: RDS(on) = 1.4 (VGS = 10 V, ID = 2.5 A)
2SK2354: RDS(on) = 1.5 (VGS = 10 V, ID = 2.5 A)
Low Ciss Ciss = 670 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3.
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)*
ID(pulse) ±18
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30
W
Total Power Dissipation (Ta = 25 ˚C)
PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
4.5
A
Single Avalanche Energy**
EAS
17.4 mJ
1 23
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
Source
The information in this document is subject to change without notice.
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
©
1994
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]