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Part Name :

HUF76609D3ST View Datasheet(PDF) - Intersil

Part NameHUF76609D3ST Intersil
Intersil Intersil
Description10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76609D3ST Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
HUF76609D3, HUF76609D3S
Typical Performance Curves (Continued)
1.2
1.2
VGS = VDS, ID = 250µA
ID = 250µA
1.0
1.1
0.8
1.0
0.6
0.4
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2000
1000
100
CISS = CGS + CGD
COSS CDS + CGD
CRSS = CGD
10
VGS = 0V, f = 1MHz
5
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2
ID = 10A
ID = 7A
ID = 4A
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
80
VGS = 4.5V, VDD = 50V, ID = 7A
tr
60
td(OFF)
40
tf
20
0
0
td(ON)
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
120
VGS = 10V, VDD = 50V, ID = 10A
90
td(OFF)
60
tf
30
0
0
tr
td(ON)
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE ()
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
5
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Features
• Ultra Low On-Resistance
   - rDS(ON) = 0.160Ω, VGS = 10V
   - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER© Electrical Models
   - Spice and SABER© Thermal Impedance Models
   - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

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