datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K2512 View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K2512
NEC
NEC => Renesas Technology NEC
K2512 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2512
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on)1 = 15 m(VGS = 10 V, ID = 23 A)
RDS (on)2 = 23 m(VGS = 4 V, ID = 23 A)
• Low Ciss Ciss = 2 100 pF TYP.
• Built-in G-S Protection Diode
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±45
A
Drain Current (pulse)*
ID(pulse) ±180
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35
W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0
W
Channel Temperature
Tch
150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW 10 µs, Duty Cycle 1 %
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Gate
Body
Diode
Gate
Protection
Diode
Source
Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]