9 Typ. gate charge
V GS=f(Q gate); I D= 15 A pulsed
parameter: V DD
10
9
120 V
8
7
480 V
6
5
4
3
2
1
0
0
20
40
60
Q gate [nC]
11 Avalanche energy
E AS=f(T j); I D=3 A; V DD=50 V
SPI15N65C3
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
150 °C, 98%
25 °C
101
150 °C
25 °C, 98%
100
80
0
0.5
1
1.5
2
V SD [V]
12 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=0.25 mA
500
400
300
200
100
0
20
Rev. 2.0
60
100
140
T j [°C]
740
720
700
680
660
640
620
600
580
180
-50
-10
30
70
110
150
T j [°C]
page 6
2007-09-10