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J494 View Datasheet(PDF) - Renesas Electronics

Part Name
Description
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J494
Renesas
Renesas Electronics Renesas
J494 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
PACKAGE DIMENSIONS
(in millimeter)
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A)
• Low Ciss Ciss = 2360 pF Typ.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Source Voltage*
VDSS
VGSS (AC)
–60
V
–+20
V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)**
VGSS (DC)
ID (DC)
ID (pulse)
–20, 0
V
–+20
A
–+80
A
Total Power Dissipation (TC = 25 °C) PT
35
W
Total Power Dissipation (TA = 25 °C) PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
* f = 20 kHz, Duty Cycle d 10% (+Side)
** PW d 10 Ps, Duty Cycle d 1%
THERMAL RESISTANCE
Channel to Case
Rth (ch-C)
Channel to Ambient
Rth (ch-A)
3.57 °C/W
62.5 °C/W
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
2.5±0.1
0.65±0.1
1 23
1. Gate
2. Drain
3. Source
ISOLATED TO-220 (MP-45F)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
©
1998
 

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