G10N60A(2007) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
G10N60A Datasheet PDF : 11 Pages
| |||
SGB10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient1)
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
1.35
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=10A
Tj=25°C
Tj=150°C
IC=300µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=10A
VGE=15V
VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
4
-
-
-
6.7
550
62
42
52
7
100
Unit
max.
-V
2.4
2.8
5
µA
40
1500
100 nA
-S
660 pF
75
51
68 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 July 07
|
|
Share Link: 