K3114 View Datasheet(PDF) - NEC => Renesas Technology
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K3114 Datasheet PDF : 8 Pages
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2SK3114
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
ID = 4.0 A
2.0 A
3.0
2.0
1.0
0
-50
VGS = 10 V
Pulsed
0
50
100
150
Tch - Channel Temperature - ˚C
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHZ
Ciss
100
Coss
10
Crss
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/mS
VGS = 0 V
1 000
100
10
0.01
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
0.1
0V
VGS = 10 V
0
0.5
Pulsed
1.0
1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
1
0.1
0.1
tr
VDD = 150 V
9 VGS = 10 V
RG = 10
1
10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 4 A
14
600
VDD = 450 V
12
300 V
150 V
10
400
VGS 8
6
200
4
VDS
2
0
0
4
8
12
16
Qg - Gate Charge - nC
Data Sheet D13337EJ2V0DS
5
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