2SC3601C View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
View to exact match
2SC3601C
SANYO -> Panasonic
2SC3601C Datasheet PDF : 4 Pages
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Ordering number:EN1766C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1407/2SC3601
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.
Package Dimensions
unit:mm
2009B
[2SA1407/2SC3601]
Features
· High fT : fT typ=400MHz.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent
high-frequency characteristic
: Cre=2.0pF (NPN), 2.5pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.
( ) : 2SA1407
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25˚C
JEDEC : TO-126
1 : Emitter
2 : Collector
3 : Base
Conditions
Ratings
Unit
(–)200 V
(–)200 V
(–)4 V
(–)150 mA
(–)300 mA
1.2 W
7W
150 ˚C
–55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)100mA
VCE=(–)30V, IC=(–)50mA
IC=(–)50mA, IB=(–)5mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
IC=50mA, IB=(–)5mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)100µA, IC=0
VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre
VCB=(–)30V, f=1MHz
Ratings
min
typ
40*
20
400
(–)200
(–)200
(–)4
2.5
(3.0)
2.0
(2.5)
max
(–)0.1
(–)1.0
320*
0.6
(–0.8)
(–)1.0
Unit
µA
µA
MHz
V
V
V
V
V
V
pF
pF
pF
pF
* : The 2SA1407/2SC3601 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/90495MO (KOTO)/3277KI/D105MW/2225MW, TS 8-7231 No.1766-1/4
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