13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω
300
mJ
240
220
200
180
160
140
120
100
80
60
40
20
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
parameter: ID=10 mA
SPP80N06S2L-11
66
V
SPP80N06S2L-11
SPB80N06S2L-11
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 80 A pulsed
SPP80N06S2L-11
16
V
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 10 20 30 40 50 60 70 80 nC 100
QGate
62
60
58
56
54
52
50
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2003-05-09