TS914IDT View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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TS914IDT Datasheet PDF : 17 Pages
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Electrical characteristics
TS914, TS914A
Table 5.
VCC+ = 10 V, VDD = 0 V, RL, CL connected to VCC/2, Tamb = 25 °C
(unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Vio
ΔVio
Iio
Iib
CMR
SVR
Avd
VOH
VOL
Io
ICC
GBP
SR
φm
en
THD
Cin
Input offset voltage (Vicm =
Vo = VCC/2)
Input offset voltage drift
TS914
TS914A
Tmin ≤ Tamb ≤ Tmax, TS914
Tmin ≤ Tamb ≤ Tmax, TS914A
Input offset current(1)
Tmin ≤ Tamb ≤ Tmax
Input bias current(1)
Tmin ≤ Tamb ≤ Tmax
Common mode rejection
ratio
Vicm = 3 to 7 V, Vo = 5 V
Vicm = 0 to 10 V, Vo = 5 V
Supply voltage rejection ratio VCC+= 5 to 10 V, Vo = VCC/2
Large signal voltage gain
RL = 10 kΩ, Vo = 2.5 V to 7.5 V
Tmin ≤ Tamb ≤ Tmax
High level output voltage
Vid = 1 V,
RL = 10 kΩ
RL = 600 Ω
RL = 100 Ω
Vid = 1 V, Tmin ≤ Tamb ≤ Tmax
RL = 10 kΩ
RL = 600 Ω
Low level output voltage
Vid = -1 V,
RL = 10 kΩ
RL = 600 Ω
RL = 100 Ω
Vid = -1 V, Tmin ≤ Tamb ≤ Tmax
RL = 10 kΩ
RL = 600 Ω
Output short-circuit current Vid = ±1 V
Supply current / operator
AVCL = 1, no load,
Tmin ≤ Tamb ≤ Tmax
Gain bandwidth product
AVCL = 100, RL = 10 kΩ, CL = 100 pF,
f = 100 kHz
Slew rate
Phase margin
Equivalent input noise
voltage
AVCL = 1, RL = 10 kΩ, CL = 100 pF,
Vi = 2.5 V to 7.5 V
Rs = 100 Ω, f = 1 kHz
Rs = 100 Ω, f = 1 kHz
Total harmonic distortion
Input capacitance
AVCL = 1, RL = 10 kΩ, CL = 100 pF,
Vo = 4.75 to 5.25 V, f = 1 kHz
10
5
12
mV
7
5
μV/°C
1
100
200
pA
1
150
300
pA
90
75
dB
90
dB
15 60
10
V/mV
9.85 9.95
9 9.35
7.8
V
9.8
9
50 180
650 800
2300
mV
150
900
60
400 600
700
1.4
mA
μA
MHz
1
V/μs
40
°
30
nV/√Hz
0.02
%
1.5
pF
6/17
Doc ID 4475 Rev 8
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