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W25Q80DVZPI View Datasheet(PDF) - Winbond

Part Name
Description
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W25Q80DVZPI Datasheet PDF : 71 Pages
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W25Q80DV
AC Electrical Characteristics (cont’d)
DESCRIPTION
SPEC
UN
SYMBOL ALT
MIN TYP MAX
IT
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
/CS High to Standby Mode without ID Read
tDP(2)
tRES1(2)
3
µs
3
µs
/CS High to Standby Mode with ID Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
/CS High to next Instruction after Reset
tRST(2)
30
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte)
tBP1(4)
15
30
µs
Additional Byte Program Time (After First Byte)
tBP2(4)
2.5
5
µs
Page Program Time
tPP
0.8
3
ms
Sector Erase Time (4KB)
tSE
45
300
ms
Block Erase Time (32KB)
tBE1
120 800 ms
Block Erase Time (64KB)
tBE2
150 1000 ms
Chip Erase Time
tCE
2
6
s
Note:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5. 4-bytes address alignment for Quad Read Conmmand, Address[1,0]=0.
- 60 -
Publication Release Date:July 21, 2015
Prelimry-Revision G
 

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