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W25Q80DVZPI View Datasheet(PDF) - Winbond

Part NameW25Q80DVZPI Winbond
Winbond Winbond
Description3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI


W25Q80DVZPI Datasheet PDF : 71 Pages
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W25Q80DV
8.2 Instruction Set Table 1 (Standard SPI Instructions)(1)
INSTRUCTION NAME BYTE 1
CLOCK NUMBER
(0 7)
BYTE 2
(8 15)
BYTE 3
(16 23)
BYTE 4
(24 31)
Write Enable
06h
Volatile SR Write Enable
50h
Write Disable
04h
Read Status Register-1
05h
(S7-S0)(2)
Read Status Register-2
35h
(S15-S8)(2)
Write Status Register
01h
(S7-S0)
Page Program
02h
A23-A16
Sector Erase (4KB)
20h
A23-A16
(S15-S8)
A15-A8
A15-A8
A7-A0
A7-A0
Block Erase (32KB)
Block Erase (64KB)
52h
A23-A16
D8h
A23-A16
A15-A8
A15-A8
A7-A0
A7-A0
Chip Erase
Erase / Program Suspend
Erase / Program Resume
Power-down
C7h/60h
75h
7Ah
B9h
Read Data
Fast Read
Release Powerdown / ID(4)
Manufacturer/Device ID(4)
03h
0Bh
ABh
90h
A23-A16
A23-A16
dummy
dummy
A15-A8
A15-A8
dummy
dummy
A7-A0
A7-A0
dummy
00h
JEDEC ID(4)
Read Unique ID
Read SFDP Register
Erase
Security Registers(5)
Program
Security Registers(5)
Read
Security Registers(5)
Enable Reset
Reset
(MF7-MF0)
(ID15-ID8)
(ID7-ID0)
9Fh
Manufacturer Memory Type
Capacity
4Bh
5Ah
dummy
A23-A16
dummy
A15-A8
dummy
A7-A0
44h
A23-A16
A15-A8
A7-A0
42h
A23-A16
A15-A8
A7-A0
48h
A23-A16
66h
99h
A15-A8
A7-A0
BYTE 5
(32 39)
BYTE 6
(40 47)
D7-D0
D7-D0(3)
(D7-D0)
dummy
(ID7-ID0)(2)
(MF7-MF0)
(D7-D0)
(ID7-ID0)
dummy
Dummy
(UID63-UID0)
(D7-D0)
D7-D0
dummy
D7-D0(3)
(D7-D0)
- 19 -
Publication Release Date:July 21, 2015
Prelimry-Revision G
Direct download click here

GENERAL DESCRIPTION
The W25Q80DV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 1µA for power-down. All devices are offered in space-saving packages.
The W25Q80DV array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80DV has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q80DV supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification with a 64-bit Unique Serial Number.

FEATURES
● Family of SpiFlash Memories
   – W25Q80DV: 8M-bit/1M-byte (1,048,576)
   – 256-byte per programmable page
   – Standard SPI: CLK,/CS,DI,DO,/WP,/Hold
   – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
   – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
   – Uniform 4KB Sectors, 32KB & 64KB Blocks
● Highest Performance Serial Flash
   – 104MHz Dual/Quad SPI clocks
   – 208/416MHz equivalent Dual/Quad SPI
   – 50MB/S continuous data transfer rate
● Software and Hardware Write Protection
   – Write-Protect all or portion of memory
   – Enable/Disable protection with /WP pin
   – Top or bottom array protection
● Flexible Architecture with 4KB sectors
   – Uniform Sector/Block Erase (4/32/64-kbytes)
   – Program one to 256 bytes < 0.8ms
   – Erase/Program Suspend & Resume
   – More than 100,000 erase/write cycles
   – More than 20-year data retention
● Low Power, Wide Temperature Range
   – Single 2.7 to 3.6V supply
   – <1µA Power-down(typ.)
● Space Efficient Packaging(1):
   – 8-pin SOIC 150-mil/208mil, VSOP 150-mil
   – 8-pad WSON 6x5-mm, USON 2x3-mm
   – 8-pin PDIP 300-mil
   – 8-ball WLCSP
   – Contact Winbond for KGD and other options

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