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K3325-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3325-Z
NEC
NEC => Renesas Technology NEC
K3325-Z Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK3324
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Drain Leakage Current
IDSS
100 µA VDS = 900 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
±100 nA VGS = ±30 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
2.5
3.5
V VDS = 10 V, ID = 1.0 mA
Forward Transfer Admittance
| yfs |
2.5 3.3
S VDS = 20 V, ID = 3.0 A
Drain to Source On-state Resistance
RDS(on)
2.5 2.8
VGS = 10 V, ID = 3.0 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
1000
pF VDS = 10 V,
Coss
200
pF VGS = 0 V,
f = 1 MHz
Crss
42
pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
17
ns VDD = 150 V,
38
ns ID = 3.0 A,
57
ns VGS(on) = 10 V,
RG = 10 Ω, RL = 10
33
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
QGS
QGD
VF(S-D)
32
nC VDD = 450 V,
5
nC VGS = 10 V,
20
nC ID = 6.0 A
0.9
V IF = 6.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
1.9
µs IF = 6.0 A, VGS = 0 V,
Qrr
9.0
µC di/dt = 50 A/µs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
L
PG
50
VDD
VGS = 20 0 V
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
RL
PG.
50
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VGS
VGS
Wave Form
010 %
VGS(on) 90 %
VDD
ID
90 %
ID
ID
0 10 %
Wave Form
90 %
10 %
td(on) tr td(off) tf
ton
toff
2
Data Sheet D14203EJ2V0DS00
 

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