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STD14NM50N View Datasheet(PDF) - STMicroelectronics

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STD14NM50N Datasheet PDF : 26 Pages
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Electrical characteristics
STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 6 A
Min. Typ. Max. Unit
500
V
1 µA
100 µA
± 100 nA
2
3
4
V
0.28 0.32 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
816
pF
-
60
- pF
3
pF
Coss eq. (1)
Equivalent output
capacitance
VDS = 0 to 50 V, VGS = 0
- 307.5 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =400 V, ID =12 A,
VGS =10 V (see Figure 18)
27
nC
-
4.6
- nC
15
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 400 V, ID = 12 A,
RG =4.7 Ω, VGS = 10 V
(see Figure 19)
Min.
-
Typ.
10.2
16
42
22
Max. Unit
ns
ns
-
ns
ns
4/26
Doc ID 16832 Rev 6
 

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