datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K3570-Z View Datasheet(PDF) - NEC => Renesas Technology

Part Name
Description
View to exact match
K3570-Z Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 12 mMAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
Built-in gate protection diode
Surface mount device available
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK
2SK3570-Z
TO-263
Note
TO-220SMD
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
20
V
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
ID(DC)
±48
A
ID(pulse)
±160
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
29
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150 °C
Note PW 10 µs, Duty Cycle 1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16256EJ2V0DS00 (2nd edition) The mark ! shows major revised points.
Date Published September 2002 NS CP (K)
Printed in Japan
©
2002
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]