PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
10.6 MAX.
10.0
φ 3.6±0.2
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
2SK3325
2)TO-262 (MP-25 Fin Cut)
(10)
4
4.8 MAX.
1.3±0.2
123
1.3±0.2
0.75±0.3
2.54 TYP.
0.5±0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZJ)
(10)
4
4.8 MAX.
1.3±0.2
1.4±0.2
0.7±0.2
(0.5R()0.8R)
2.54 TYP. 1 2 3 2.54 TYP.
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14264EJ1V0DS00
7